NOISE IN IMPATT DIODES - INTRINSIC PROPERTIES

被引：29
|
作者：
KUVAS, RL
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1972年 / ED19卷 / 02期
关键词：
D O I：
10.1109/T-ED.1972.17400
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：220 / +
页数：1
相关论文
共 50 条
  • [1] NOISE IN SILICON IMPATT DIODES
    ARMENCHA, NN
    TARKHIN, DV
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (02): : 321 - &
  • [2] NOISE FEEDBACK IN IMPATT DIODES
    EGGEL, H
    [J]. NACHRICHTENTECHNISCHE ZEITSCHRIFT, 1975, 28 (01): : 28 - 29
  • [3] IMPATT DIODES NOISE MEASURE
    OKAMOTO, H
    IKEDA, M
    [J]. REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1978, 26 (1-2): : 178 - 185
  • [4] OPTIMUM NOISE MEASURE OF IMPATT DIODES
    HAUS, HA
    STATZ, H
    PUCEL, RA
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1971, MT19 (10) : 801 - +
  • [5] NONLINEAR NOISE THEORY FOR IMPATT DIODES
    KUVAS, RL
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (04) : 395 - 411
  • [6] NOISE CHARACTERISTICS OF SI IMPATT-DIODES OSCILLATORS
    GERSHENZON, EM
    LEVITES, AA
    SMETANIN, AI
    [J]. RADIOTEKHNIKA I ELEKTRONIKA, 1987, 32 (12): : 2623 - 2631
  • [7] THEORY OF OSCILLATOR NOISE AND ITS APPLICATION TO IMPATT DIODES
    FIKART, JL
    GOUD, PA
    [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (05) : 2284 - 2296
  • [8] COMPARATIVE-STUDY OF NOISE PROPERTIES OF SI IMPATT DIODES OPERATING AT 80 GHZ
    OKAMOTO, H
    IKEDA, M
    [J]. PROCEEDINGS OF THE IEEE, 1976, 64 (03) : 367 - 368
  • [9] PROPERTIES OF MILLIMETER-WAVE IMPATT DIODES
    SEDDIK, MM
    HADDAD, GI
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (12) : 809 - 811
  • [10] IMPATT DIODES
    DENOBEL, D
    VLAARDINGERBROEK, MT
    [J]. PHILIPS TECHNICAL REVIEW, 1971, 32 (9-12): : 328 - 344
12345