The contrast of grain boundary dislocations

被引：0

作者：

Joksch, M

Wurzinger, P

Pongratz, P

机构：

来源：

MICROSCOPY OF SEMICONDUCTING MATERIALS 1995 | 1995年 / 146卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The contrast formed in TEM strong beam images by grain boundary dislocations in CVD-diamond was studied in detail. For certain diffraction conditions new contrast criteria were found, which can be used to determine the sign of g . b and to estimate its absolute value.

引用

页码：99 / 102

页数：4

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