The contrast of grain boundary dislocations

被引：0
|
作者：
Joksch, M
Wurzinger, P
Pongratz, P
机构：
来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS 1995 | 1995年 / 146卷
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The contrast formed in TEM strong beam images by grain boundary dislocations in CVD-diamond was studied in detail. For certain diffraction conditions new contrast criteria were found, which can be used to determine the sign of g . b and to estimate its absolute value.
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页码：99 / 102
页数：4
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