EFFECT OF UNIAXIAL-STRESS ON PHOTOLUMINESCENCE SPECTRUM OF SI-IMPLANTED GAAS SLICE

被引：1
|
作者：
SHIRAKAWA, T
HARAGUCHI, M
HAMAGUCHI, C
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1985年 / 24卷 / 08期
关键词：
D O I：
10.1143/JJAP.24.1107
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：1107 / 1108
页数：2
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