MOLECULAR-BEAM EPITAXY OF III-V COMPOUNDS

被引：1
|
作者：
KUNZEL, H
机构：
来源：
PHYSICA B & C | 1985年 / 129卷 / 1-3期
关键词：
D O I：
10.1016/0378-4363(85)90555-8
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：66 / 80
页数：15
相关论文
共 50 条
  • [21] Molecular-beam epitaxy and device applications of III-V semiconductor nanowires
    Hasegawa, H
    Fujikura, H
    Okada, H
    MRS BULLETIN, 1999, 24 (08) : 25 - 30
  • [22] A thermodynamic analysis of the growth of III-V compounds with two volatile group V elements by molecular-beam epitaxy
    Egorov, AY
    Kovsh, AR
    Ustinov, VM
    Zhukov, AE
    Kop'ev, PS
    Tu, CW
    JOURNAL OF CRYSTAL GROWTH, 1998, 188 (1-4) : 69 - 74
  • [23] METALORGANIC MOLECULAR-BEAM EPITAXY OF III-V COMPOUNDS USING TERTIARYBUTYL-V AS GROUP-V SOURCES
    SASAKI, Y
    FUKUMA, Y
    ABE, T
    ZHU, ZQ
    YAO, T
    TAKEHARA, J
    KITAGAWA, M
    JOURNAL OF CRYSTAL GROWTH, 1994, 136 (1-4) : 162 - 165
  • [24] THERMODYNAMIC ANALYSIS OF MOLECULAR-BEAM EPITAXY OF III-V COMPOUNDS - APPLICATION TO THE GAYIN1-YAS MULTILAYER EPITAXY
    SHEN, JY
    CHATILLON, C
    JOURNAL OF CRYSTAL GROWTH, 1990, 106 (04) : 553 - 565
  • [25] Surface diffusion during shadow-mask-assisted molecular-beam epitaxy of III-V compounds
    Schallenberg, T
    Brunner, K
    Borzenko, T
    Molenkamp, LW
    Karczewski, G
    JOURNAL OF APPLIED PHYSICS, 2005, 98 (01)
  • [26] INCORPORATION RATE VARIATION AT HETEROINTERFACES DURING III-V MOLECULAR-BEAM EPITAXY
    EVANS, KR
    STUTZ, CE
    TAYLOR, EN
    EHRET, JE
    APPLIED SURFACE SCIENCE, 1992, 56-8 : 677 - 683
  • [27] MOLECULAR-BEAM EPITAXY OF HETEROSTRUCTURES MADE OF III-V-COMPOUNDS
    KOPEV, PS
    LEDENTSOV, NN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (10): : 1093 - 1101
  • [28] INCORPORATION DESORPTION RATE VARIATION AT HETEROINTERFACES IN III-V MOLECULAR-BEAM EPITAXY
    EVANS, KR
    STUTZ, CE
    TAYLOR, EN
    EHRET, JE
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (04): : 2427 - 2428
  • [29] MOLECULAR STREAM EPITAXY OF III-V COMPOUNDS
    KATSUYAMA, T
    TISCHLER, MA
    HUMPHREYS, TP
    BEDAIR, SM
    JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (05) : 293 - 293
  • [30] III-V STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY FOR HIGH-SPEED DEVICES
    MILLER, DL
    THIN SOLID FILMS, 1984, 118 (02) : 117 - 127
12345