INTRINSIC SEQUENCE IN THE BREAKDOWN OF THE QUANTUM HALL-EFFECT

The breakdown of the quantum Hall effect in high-mobility Si-MOSFETs occurs in a series of resistance steps as the current is increased beyond a critical value. These steps, that correspond to the successive breakdown of spatially localized parts of the sample, are not determined by inhomogeneities but have an intrinsic origin. We also observe that the breakdown always starts in the corner where the electrons enter the 2DEG. This asymmetry implies the need for a microscopic approach. © 1990.