ION-BEAM EXPOSURE OF POLYMER RESIST PMMA

被引:2
|
作者
TUNG, NC
机构
关键词
D O I
10.1149/1.2116039
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:2152 / 2157
页数:6
相关论文
共 50 条
  • [1] ION-BEAM EXPOSURE OF PMMA POLYMER RESIST
    MUHLE, R
    GOTZ, G
    [J]. VACUUM, 1988, 38 (11) : 1005 - 1006
  • [2] ION-BEAM EXPOSURE OF RESIST MATERIALS
    KOMURO, M
    ATODA, N
    KAWAKATSU, H
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : 483 - 490
  • [3] DRY DEVELOPMENT OF ION-BEAM EXPOSED PMMA RESIST
    ADESIDA, I
    CHINN, JD
    RATHBUN, L
    WOLF, ED
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 666 - 671
  • [4] HYDROGEN AND PHOSPHORUS ION-BEAM EXPOSURE CHARACTERISTICS OF PMMA
    WADA, Y
    MIGITAKA, M
    MOCHIJI, K
    OBAYASHI, H
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (05) : 1127 - 1131
  • [5] 30 NM LINE FABRICATION ON PMMA RESIST BY FINE FOCUSED BE ION-BEAM
    SHIOKAWA, T
    AOYAGI, Y
    KIM, PH
    TOYODA, K
    NAMBA, S
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (04): : L232 - L233
  • [6] ION-BEAM EXPOSURE PROFILES IN PMMA-COMPUTER SIMULATION
    KARAPIPERIS, L
    ADESIDA, I
    LEE, CA
    WOLF, ED
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1259 - 1263
  • [7] RESIST POSSIBILITIES IN ION-BEAM LITHOGRAPHY
    MACRANDER, A
    BARR, D
    WAGNER, A
    [J]. OPTICAL ENGINEERING, 1983, 22 (02) : 215 - 219
  • [8] AN INORGANIC RESIST FOR ION-BEAM MICROFABRICATION
    BALASUBRAMANYAM, K
    KARAPIPERIS, L
    LEE, CA
    RUOFF, AL
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (01): : 18 - 22
  • [9] A BILEVEL RESIST FOR ION-BEAM LITHOGRAPHY
    MILGRAM, A
    PURETZ, J
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (03): : 879 - 883
  • [10] MEV ION-BEAM LITHOGRAPHY OF PMMA
    BREESE, MBH
    GRIME, GW
    WATT, F
    WILLIAMS, D
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 77 (1-4): : 169 - 174