EFFECT OF OXIDE HYDRATION ON SURFACE POTENTIAL OF OXIDIZED P-TYPE SILICON

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作者：
KUPER, AB
NICOLLIAN, EH
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1964年 / 111卷 / 08期
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中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
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页码：C193 / C193
页数：1
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