共 50 条
- [21] BE-DOPED GAAS-LAYERS GROWN AT A HIGH AS/GA RATIO BY MOLECULAR-BEAM EPITAXY JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (04): : 1120 - 1123
- [23] MICROSTRUCTURE OF ANNEALED LOW-TEMPERATURE-GROWN GAAS-LAYERS APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1991, 53 (02): : 141 - 146
- [24] THE GROTESQUES OF OVAL DEFECTS ON THE MBE-GROWN GAAS-LAYERS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (05): : 774 - 775
- [27] RESIDUAL IMPURITY AND DEFECT LEVELS IN GAAS-LAYERS GROWN BY MBE BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 205 - 205