SELF-ORGANIZATION PHENOMENA DURING POROUS SILICON FORMATION

被引：4

作者：

PROKAZNIKOV, AV ^{[1
]}

MASLYENITSYN, SF ^{[1
]}

SVYATCHENKO, AA ^{[1
]}

PAVLOV, ST ^{[1
]}

机构：

[1] PN LEBEDEV PHYS INST,MOSCOW 117924,RUSSIA

来源：

SOLID STATE COMMUNICATIONS | 1994年 / 90卷 / 04期

关键词：

D O I：

10.1016/0038-1098(94)90463-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In the system of electrolyte (hydrofluoric acid - HF-48 %)-silicon (phosphorus doped, specific resistivity is equal to 4.5 OMEGA.cm) the self-organization phenomena were discovered and investigated which are developed during the pores formation and show themselves in formation of periodic concentric structures of closepacked array of pores of two kinds: circular and radial. Experimentally obtained current-potential characteristic is S-formed. The surface of porous silicon, which was formed by different conditions, is investigated.

引用

页码：217 / 221

页数：5

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