共 50 条
- [42] INTERBAND CRITICAL-POINTS OF GAAS AND THEIR TEMPERATURE-DEPENDENCE [J]. PHYSICAL REVIEW B, 1987, 35 (17): : 9174 - 9189
- [43] TEMPERATURE-DEPENDENCE OF FAR-INFRARED ABSORPTION IN GAAS [J]. PHYSICAL REVIEW B, 1975, 11 (02): : 767 - 770
- [46] TEMPERATURE-DEPENDENCE OF THE WIDTH OF THE GAAS BAND-GAP [J]. SEMICONDUCTORS, 1995, 29 (03) : 227 - 229
- [49] INVESTIGATION OF THE TEMPERATURE-DEPENDENCE OF THE DECHANNELING IN WEAKLY DAMAGED GAAS [J]. EPM 87: ENERGY PULSE AND PARTICLE BEAM MODIFICATION OF MATERIALS, 1988, 8 : 187 - 189