EFFECT OF SCATTERING IN ELECTRODES ON DOUBLE-BARRIER RESONANT TUNNELING

被引:4
|
作者
SUGIMURA, A
机构
[1] NTT Basic Research Laboratories, Musashino-shi
来源
PHYSICAL REVIEW B | 1991年 / 43卷 / 05期
关键词
D O I
10.1103/PhysRevB.43.4276
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Assuming that electrons in quantum-well and electrode regions are well separated from each other, resonant tunneling is analyzed as a quantum transition from one electrode to the other, in which the effects of scattering in the electrodes are introduced through damping constants. Explicit formulas for tunneling currents are obtained for long- and short-electrode limits. It is found, for the long-electrode case, that a coherent tunneling process predominates over an incoherent process when the damping constant gamma-12 for the current operator is smaller than the electron transfer rate through a barrier, while the incoherent process dominates when gamma-12 is larger. It is also found that there is a quantum-transition region near the barrier inside the electrode, where the carrier density and the local current are not homogeneous. The coherent interaction length, defined as the size of the quantum-transition region, is a monotonic decreasing function with respect to the damping constant. In the short-electrode limit too, there is a quantum-transition region. The tunneling current in this region is linearly dependent on the electrode size.
引用
收藏
页码:4276 / 4285
页数:10
相关论文
共 50 条
  • [21] DOUBLE-BARRIER RESONANT TUNNELING DIODES - THEORY AND EXPERIMENT
    VANDEROER, TG
    HEYKER, HC
    KAUFMANN, LMF
    KWASPEN, JJM
    SCHEMMANN, M
    JOOSTEN, HP
    LENSTRA, D
    NOTEBORN, H
    HENINI, M
    HUGHES, OH
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (106): : 831 - 836
  • [22] Coherent Resonant Tunneling Model in Double-Barrier Nanostructures
    Wu, Y.
    Ge, G.-Q.
    Yang, X.-X.
    Communications in Theoretical Physics, 27 (02):
  • [23] DYNAMICS OF DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURES
    PANDEY, LN
    MURATOV, LS
    STOCKMAN, MI
    GEORGE, TF
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1994, 185 (01): : 151 - 161
  • [24] RESONANT-TUNNELING IN DOUBLE-BARRIER SEMICONDUCTOR NANOSTRUCTURES
    ROY, DK
    SINGH, A
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 1995, 9 (23): : 3039 - 3051
  • [25] PIEZOREFLECTANCE CHARACTERIZATION OF DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES
    TOBER, RL
    PAMULAPATI, J
    OH, JE
    BHATTACHARYA, PK
    APPLIED PHYSICS LETTERS, 1988, 53 (10) : 883 - 885
  • [26] OPTICALLY CONTROLLED RESONANT TUNNELING IN A DOUBLE-BARRIER DIODE
    KAN, SC
    WU, S
    SANDERS, S
    GRIFFEL, G
    YARIV, A
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (05) : 3384 - 3386
  • [27] Resonant tunneling in ZnSe/BeTe double-barrier structures
    Keim, M
    Lunz, U
    Fischer, F
    Waag, A
    Landwehr, G
    JOURNAL OF CRYSTAL GROWTH, 1998, 184 : 806 - 809
  • [28] Mesopiezoresistive effects in double-barrier resonant tunneling structures
    Xu, Liping
    Wen, Tingdun
    Yang, Xiaofeng
    Xue, Chenyang
    Xiong, Jijun
    Zhang, Wendong
    Wu, Mingzhong
    Hochheimer, Hans D.
    APPLIED PHYSICS LETTERS, 2008, 92 (04)
  • [29] Conductance fluctuations in a double-barrier resonant tunneling device
    Main, PC
    Foster, TJ
    McDonnell, P
    Eaves, L
    Gompertz, MJ
    Mori, N
    Sakai, JW
    Henini, A
    Hill, G
    PHYSICAL REVIEW B, 2000, 62 (24) : 16721 - 16726
  • [30] Response time of the double-barrier heterostructures with resonant tunneling
    Feiginov, MN
    PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 851 - 852