Gate-structure optimization for high frequency power AlGaN/GaN HEMTs

被引：3

作者：

Wang Dongfang ^{[1
,2
]}

Yuan Tingting ^{[1
,2
]}

Wei Ke ^{[1
]}

Chen Xiaojuan ^{[1
]}

Liu Xinyu ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China

[2] Grad Univ Chinese Acad Sci, Beijing 100049, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2010年 / 31卷 / 05期

基金：

中国国家自然科学基金;

关键词：

AlGaN/GaN HEMT; high frequency; gate structure; power;

D O I：

10.1088/1674-4926/31/5/054003

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The influence of gate-head and gate-source-spacing on the performance of AlGaN/GaN HEMTs was studied. Suggestions are then made to improve the performance of high frequency power AlGaN/GaN HEMTs by optimizing the gate-structure. Reducing the field-plate length can effectively enhance gain, current gain cutoff frequency and maximum frequency of oscillation. By reducing the field-plate length, devices with 0.35 mu m gate length have exhibited a current gain cutoff frequency of 30 GHz and a maximum frequency of oscillation of 80 GHz. The maximum frequency of oscillation can be further optimized either by increasing the gate-metal thickness, or by using a tau-shape gate (the gate where the gate-head tends to the source side). Reducing the gate-source spacing can enhance the maximum drain-current and breakdown voltage, which is beneficial in enhancing the maximum output power of AlGaN/GaN HEMTs.

引用

页码：0540031 / 0540034

页数：4

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