共 50 条
- [1] STUDY OF SILICON CONTAMINATION AND NEAR-SURFACE DAMAGE CAUSED BY CF4/H2 REACTIVE ION ETCHING[J]. APPLIED PHYSICS LETTERS, 1984, 45 (04) : 420 - 422OEHRLEIN, GSTROMP, RMLEE, YHPETRILLO, EJ
- [2] A STUDY OF SILICON CONTAMINATION AND NEAR-SURFACE DAMAGE CAUSED BY CF4/H2 REACTIVE ION ETCHING[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (08) : C312 - C312OEHRLEIN, GSTROMP, RMLEE, YHPETRILLO, EJ
- [3] SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING WITH CF4-H2[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : 1419 - 1421EPHRATH, LM
- [4] SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING AND CF4-H2[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (08) : C284 - C284EPHRATH, LM
- [5] NEAR-SURFACE RESIDUE FORMATION IN CF4/H2 REACTIVE ION ETCHING OF SILICON[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (06): : 2398 - 2406POTTER, GEMORRISON, GHCHARVAT, PKRUOFF, AL
- [6] CARBONACEOUS OVERLAYER AND NEAR-SURFACE DAMAGE AFTER PURE CF4 REACTIVE ION-BEAM ETCHING OF SILICON - EXPOSURE DOSE EFFECTS[J]. APPLIED SURFACE SCIENCE, 1989, 36 (1-4) : 350 - 361LEJEUNE, CGRANDCHAMP, JPGILLES, JPCOLLARD, ESCHEIBLIN, P
- [7] COMPARISON OF THE DAMAGE AND CONTAMINATION PRODUCED BY CF4 AND CF4/H2 REACTIVE ION ETCHING - THE ROLE OF HYDROGEN[J]. APPLIED PHYSICS LETTERS, 1986, 48 (17) : 1147 - 1149MU, XCFONASH, SJROHATGI, ARIEGER, J
- [8] NEAR-SURFACE CONTAMINATION OF SILICON DURING REACTIVE ION-BEAM ETCHING WITH CHLORINE[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 812 - 817CHARVAT, PKKRUEGER, EERUOFF, AL
- [9] STUDY OF NEAR-SURFACE DISORDER AND SURFACE RESIDUES AFTER REACTIVE ION ETCHING OF SILICON[J]. SURFACE AND INTERFACE ANALYSIS, 1986, 9 (1-6) : 275 - 281OEHRLEIN, GSCOYLE, GJCLABES, JGLEE, YH
- [10] CHARACTERIZATION OF SILICON SURFACE CONTAMINATION AND NEAR-SURFACE DAMAGE CAUSED BY C2F6 CHF3 REACTIVE ION ETCHING[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (08) : 2634 - 2639YUN, SJPARK, SJPAEK, MCLEE, JY