STUDY OF NEAR-SURFACE DISORDER AND SURFACE RESIDUES AFTER REACTIVE ION ETCHING OF SILICON

被引：13
|
作者：
OEHRLEIN, GS [1 ]
COYLE, GJ [1 ]
CLABES, JG [1 ]
LEE, YH [1 ]
机构：
[1] IBM CORP,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533
来源：
SURFACE AND INTERFACE ANALYSIS | 1986年 / 9卷 / 1-6期
关键词：
D O I：
10.1002/sia.740090503
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：275 / 281
页数：7
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