共 50 条
- [4] ATOMIC LAYER GROWTH OF BI-SR-CA-CU-O BY MOLECULAR-BEAM EPITAXY USING OZONE UNDER UV IRRADIATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (1B): : L106 - L109
- [5] ATOMIC LAYER BY ATOMIC LAYER GROWTH OF BI-SR-CA-CU OXIDE SUPERCONDUCTING THIN-FILMS BY MOLECULAR-BEAM EPITAXY [J]. PHYSICA C, 1991, 185 : 2013 - 2014
- [6] INSITU GROWTH OF BI-SR-CA-CU-O FILMS BY SHUTTER-CONTROLLED MOLECULAR-BEAM EPITAXY [J]. SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 1991, 4 : S118 - S120
- [7] LAYER-BY-LAYER DEPOSITION OF MULTILAYER BI-SR-CA-CU-O/BI-SR-CU-O [J]. VACUUM, 1992, 43 (11) : 1027 - 1029
- [8] INSITU GROWTH OF BI-SR-CA-CU-O THIN-FILMS BY MOLECULAR-BEAM EPITAXY TECHNIQUE WITH PURE OZONE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (07): : L1217 - L1219
- [9] Atomic layer growth of Bi-Sr-Ca-Cu-O by molecular beam epitaxy using ozone under UV irradiation [J]. Yokoyama, Shin, 1600, (30):
- [10] EPITAXIAL-GROWTH OF BI-SR-CA-CU-O THIN-FILMS BY MOLECULAR-BEAM EPITAXY TECHNIQUE WITH SHUTTER CONTROL [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (10): : L1809 - L1811