ANOMALOUS IV CHARACTERISTICS IN MG-DOPED GAN POINT CONTACT DIODES

被引：0
|
作者：
MORIMOTO, Y [1 ]
机构：
[1] OKI ELECT IND CO LTD,550-5 HIGASHI,HACHIOJI 193,TOKYO,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1975年 / 14卷 / 04期
关键词：
D O I：
10.1143/JJAP.14.577
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：577 / 578
页数：2
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