SEMICONDUCTOR QUANTUM DOT RESONANT TUNNELING SPECTROSCOPY

被引：1

作者：

REED, MA ^{[1
]}

RANDALL, JN ^{[1
]}

LUSCOMBE, JH ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75265

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 3B期

关键词：

D O I：

10.1088/0268-1242/7/3B/003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recently, three-dimensionally laterally confined semiconductor quantum wells ('quantum dots') have been realized. These structures are analogous to semiconductor atoms, with energy level separation of order 25 meV, and tunable by means of the confining potentials. A systematic study reveals a (radius)-1 dependence on the energy separation. The electronic transport through quantum dots is presented and analysed. The spectra correspond to resonant tunnelling from laterally confined emitter contact subbands through the discrete three-dimensionally confined quantum dot states. The effects of two dots in series, and Fermi level effects, are presented.

引用

页码：B12 / B14

页数：3

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