FIELD-DEPENDENT MOBILITY EFFECTS IN EXCESS NOISE OF JUNCTION-GATE FIELD-EFFECT TRANSISTORS

被引：6

|

作者：

HALLADAY, HE

VANDERZI.A

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1967年 / ED14卷 / 02期

关键词：

D O I：

10.1109/T-ED.1967.15908

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：110 / &

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