SWITCHING CHARACTERISTICS OF MOS AND JUNCTION-GATE FIELD-EFFECT TRANSISTORS

被引：6

作者：

DAS, MB

机构：

来源：

PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON | 1967年 / 114卷 / 09期

关键词：

D O I：

10.1049/piee.1967.0236

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1223 / &

共 50 条

[1] CHARGE-CONTROL ANALYSIS OF MOS AND JUNCTION-GATE FIELD-EFFECT TRANSISTORS
DAS, MB
PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1966, 113 (10): : 1565 - +
[2] THERMAL NOISE IN JUNCTION-GATE FIELD-EFFECT TRANSISTORS
BRUNCKE, WC
VANDERZI.A
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (03) : 323 - +
[3] GENERATION-RECOMBINATION NOISE OF JUNCTION-GATE FIELD-EFFECT TRANSISTORS
BOCTOR, WJ
PRASAD, S
PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1974, 121 (12): : 1457 - 1459
[4] CURRENT SATURATION AND DRAIN CONDUCTANCE OF JUNCTION-GATE FIELD-EFFECT TRANSISTORS
WU, SY
SAH, CT
SOLID-STATE ELECTRONICS, 1967, 10 (06) : 593 - &
[5] HIGH-FREQUENCY EQUIVALENT CIRCUITS OF JUNCTION-GATE FIELD-EFFECT TRANSISTORS
CALZOLARI, PU
GRAFFI, S
MAZZONE, A
ELECTRONICS LETTERS, 1970, 6 (18) : 590 - +
[6] EXCESS GATE CURRENT IN A JUNCTION-GATE FIELD-EFFECT TRANSISTOR
MO, DL
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (07): : 1166 - &
[7] THEORY OF LOW-FREQUENCY GENERATION NOISE IN JUNCTION-GATE FIELD-EFFECT TRANSISTORS
SAH, CT
PROCEEDINGS OF THE IEEE, 1964, 52 (07) : 795 - +
[8] FIELD-DEPENDENT MOBILITY EFFECTS IN EXCESS NOISE OF JUNCTION-GATE FIELD-EFFECT TRANSISTORS
HALLADAY, HE
VANDERZI.A
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (02) : 110 - &
[9] DC CHARACTERISTICS OF JUNCTION GATE FIELD-EFFECT TRANSISTORS
HALLADAY, HE
VANDERZI.A
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (06) : 531 - &
[10] CURRENT-VOLTAGE CHARACTERISTICS OF JUNCTION-GATE FIELD-EFFECT TRANSISTOR WITH FIELD-DEPENDENT MOBILITY
MO, DL
YANAI, H
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (08) : 577 - +

← 1 2 3 4 5 →