HEAT-TREATMENT-INDUCED CHANGES IN INTERNAL QUANTUM EFFICIENCY OF LUMINESCENCE DUE TO DEEP CENTERS IN GAAS

被引：0
|
作者：
VOVNENKO, VI [1 ]
GLINCHUK, KD [1 ]
PROKHOROVICH, AV [1 ]
机构：
[1] ACAD SCI UKSSR,INST SEMICOND,KIEV,UKSSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1976年 / 10卷 / 11期
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D O I：
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
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页码：1288 / 1289
页数：2
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