Saturation of luminescence quenching due to nonradiative centers in a GaAs/AlGaAs quantum well

被引：14
|
作者：
Kamata, N [1 ]
Kanoh, E [1 ]
Hoshino, K [1 ]
Yamada, K [1 ]
Nishioka, M [1 ]
Arakawa, Y [1 ]
机构：
[1] UNIV TOKYO,INST IND SCI,TOKYO 106,JAPAN
来源：
ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4 | 1995年 / 196-卷
关键词：
photoluminescence; below-gap excitation; nonradiative recombination;
D O I：
10.4028/www.scientific.net/MSF.196-201.431
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
When the energy of a below-gap excitation (BGE) coinsides with that of nonradiative recombination (NRR) centers, the intensity of photoluminescence (PL) was quenched with increasing the BGE power. We have observed a saturation of the PL quenching in a lightly-doped quantum well and established a method of determining NRR parameters quantitatively. The PL quenching saturation was attributed to a BGE and resulting filling up of electrons in two interacting levels. Combined with time-resolved PL measurements, NRR parameters of these levels. have been determined, which agreed fairly well with experimental results.
引用
收藏
页码：431 / 435
页数：5
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