LASER PHOTOCHEMICAL ETCHING OF SILICON

被引：6

作者：

AFFROSSMAN, S ^{[1
]}

BAILEY, RT ^{[1
]}

CRAMER, CH ^{[1
]}

CRUICKSHANK, FR ^{[1
]}

MACALLISTER, JMR ^{[1
]}

ALDERMAN, J ^{[1
]}

机构：

[1] PLESSEY RES CASWELL LTD, TOWCESTER NN12 8EQ, NORTHANTS, ENGLAND

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1989年 / 49卷 / 05期

关键词：

Chemical Reactions--Photochemical Reactions - Lasers; Gas; -; Spectroscopy; Electron; Infrared;

D O I：

10.1007/BF00617021

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Argon laser induced chemical etching of single crystal silicon with chlorine is studied. Etch rates are determined as a function of gas pressure, crystal orientation, laser power and wavelength. Analysis of gas phase and surface products by Fourier transform IR and X-ray photoelectron spectroscopy are used to probe the reaction mechanism. Contrary to previous reports, no thermally enhanced etch rate is observed for Si(111) and the presence of oxide on the surface is found to inhibit etching even at high laser power.

引用

页码：533 / 542

页数：10

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