COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS - REPLY

被引：3
|
作者：
CHAND, N
HENDERSON, T
KLEM, J
MASSELINK, WT
FISCHER, R
CHANG, YC
MORKOC, H
机构：
来源：
PHYSICAL REVIEW B | 1987年 / 36卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.36.4454
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：4454 / 4455
页数：2
相关论文
共 50 条
  • [21] EFFECT OF H-2 ON THE QUALITY OF SI-DOPED ALXGA1-XAS GROWN BY MBE
    KONDO, K
    MUTO, S
    NANBU, K
    ISHIKAWA, T
    HIYAMIZU, S
    HASHIMOTO, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (02): : L121 - L123
  • [22] EVIDENCE FOR LARGE LATTICE-RELAXATION AT THE DX CENTER IN SI-DOPED ALXGA1-XAS
    MOONEY, PM
    NORTHROP, GA
    MORGAN, TN
    GRIMMEISS, HG
    PHYSICAL REVIEW B, 1988, 37 (14): : 8298 - 8307
  • [23] ANALYSIS OF THE SHALLOW AND DEEP CENTER OCCUPANCIES IN SI-DOPED ALXGA1-XAS USING A MULTILEVEL DONOR MODEL
    BLOM, PWM
    KOENRAAD, PM
    BLOM, FAP
    WOLTER, JH
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (09) : 4269 - 4274
  • [24] PROPERTIES OF GE-DOPED GAAS AND ALXGA1-XAS,SN-DOPED ALXGA1-XAS AND SI-TE-DOPED GAAS
    SHIH, KK
    PETTIT, GD
    JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (02) : 391 - 408
  • [25] DX CENTERS IN SI-DOPED ALXGA1-XAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    OKAMOTO, K
    KOIZUMI, H
    YAMAGUCHI, K
    JOURNAL OF APPLIED PHYSICS, 1990, 68 (04) : 1669 - 1673
  • [26] The Increase of Radiative Lifetime of Free Excitons in Selectively Si-doped GaAs/AlxGa1-xAs Heterostructures
    Kundrotas, Jurgis
    Cerskus, Aurimas
    Nargeliene, Viktorija
    Suziedelis, Algirdas
    Asmontas, Steponas
    Gradauskas, Jonas
    Johannessen, Erik
    Johannessen, Agne
    MATERIALS SCIENCE-MEDZIAGOTYRA, 2014, 20 (02): : 153 - 156
  • [27] Anti-stokes photoluminescence from Si modulation doped AlyGa1-yAs/AlxGa1-xAs QW and Si double delta doped AlxGa1-xAs
    Junnarkar, MR
    Yamaguchi, E
    SOLID-STATE ELECTRONICS, 1996, 40 (1-8) : 665 - 671
  • [28] Anti-stokes photoluminescence from Si modulation doped AlyGa1-yAs/AlxGa1-xAs QW and Si double delta doped AlxGa1-xAs
    NTT Basic Research Lab, Kanagawa, Japan
    Solid State Electron, 1-8 (665-671):
  • [29] Etching of AlxGa1-xAs (0 &le x &le 1) by trisdimethylaminoarsine
    Goto, Shigeo
    Nomura, Yasuhiko
    Morishita, Yoshitaka
    Japanese Journal of Applied Physics, Part 2: Letters, 1995, 34 (5 A):
  • [30] Photoexcited states of DX centers in Si doped AlxGa1-xAs
    Jia, YB
    Grimmeiss, HG
    JOURNAL OF APPLIED PHYSICS, 1996, 80 (06) : 3493 - 3503
12345