EPITAXIAL GROWTH OF SILICON CARBIDE

被引：3
|
作者：
BRANDER, RW
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1964年 / 111卷 / 07期
关键词：
D O I：
10.1149/1.2426276
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：881 / 883
页数：3
相关论文
共 50 条
  • [1] EPITAXIAL GROWTH OF SILICON CARBIDE
    JENNINGS, VJ
    SOMMER, A
    CHANG, HC
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) : 728 - &
  • [2] THE EPITAXIAL GROWTH OF SILICON CARBIDE
    JENNINGS, VJ
    SOMMER, A
    CHANG, HC
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (08) : C210 - C210
  • [3] EPITAXIAL GROWTH OF SILICON ON HEXAGONAL SILICON CARBIDE
    TALLMAN, RL
    CHU, TL
    GRUBER, GA
    OBERLY, JJ
    WOLLEY, ED
    JOURNAL OF APPLIED PHYSICS, 1966, 37 (04) : 1588 - &
  • [4] Bulk and epitaxial growth of silicon carbide
    Kimoto, Tsunenobu
    PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 2016, 62 (02) : 329 - 351
  • [5] Influence of silicon cluster on epitaxial growth of silicon carbide
    ZheYang Li
    Yun Li
    Chen Chen
    Pin Han
    Science China Physics, Mechanics and Astronomy, 2011, 54
  • [6] Influence of silicon cluster on epitaxial growth of silicon carbide
    Li ZheYang
    Li Yun
    Chen Chen
    Han Pin
    SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2011, 54 (09) : 1579 - 1582
  • [7] Influence of silicon cluster on epitaxial growth of silicon carbide
    LI ZheYang 1
    2 National Key Laboratory of Monolithic Integrated Circuits and Modules
    Science China(Physics,Mechanics & Astronomy), 2011, (09) : 1579 - 1582
  • [8] EPITAXIAL GROWTH OF SILICON CARBIDE BY THERMAL REDUCTION
    CAMPBELL, RB
    CHU, TL
    LIANG, KC
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (08) : C186 - &
  • [9] EPITAXIAL GROWTH OF CUBIC SILICON CARBIDE FILMS
    KHAN, IH
    SUMMERGR.RN
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1967, 4 (05): : 327 - &
  • [10] Epitaxial growth and characterization of silicon carbide films
    Dhanaraj, G
    Dudley, M
    Chen, Y
    Ragothamachar, B
    Wu, B
    Zhang, H
    JOURNAL OF CRYSTAL GROWTH, 2006, 287 (02) : 344 - 348
12345