Exciton states in InxGa1-xAs/GaAs double quantum wells: Normalized reflection spectral

被引：1
|
作者：
DAndrea, A
Tomassini, N
Ferrari, L
Righini, M
Selci, S
Bruni, MR
Simeoni, G
机构：
[1] CNR,IST STRUTTURA MAT,I-00044 FRASCATI,ITALY
[2] CNR,IST CHIM MAT,I-00016 ROME,ITALY
来源：
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS | 1995年 / 17卷 / 11-12期
关键词：
Conference proceedings; Excitons and related phenomena (including electron-hole drops); Surface and interface electron states;
D O I：
10.1007/BF02457221
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Normalized reflection spectra in GaInAs/GaAs quantum wells are shown for two sets of samples with different alloy concentration (x = 9% and 18.5%) and well thickness ranging from 1.5 nm to 25 nm. All samples were grown on (001)GaAs surface by Molecular Beam Epitaxy and characterized by RHEED and X-ray reflection diffraction. Exciton envelope function in effective mass approximation and optical response in polaritonic schema are computed. Normalized reflection spectroscopy has shown itself to be a well suited technique in order to study structural and electronic properties of confined quantum structures.
引用
收藏
页码：1423 / 1427
页数：5
相关论文
共 50 条
  • [41] Above-barrier states in InxGa1-xAs/GaAs multiple quantum wells with a thin cap layer
    Worren, T
    Ozanyan, KB
    Hunderi, O
    Martelli, F
    PHYSICAL REVIEW B, 1998, 58 (07) : 3977 - 3988
  • [42] CONDUCTION-BAND DISCONTINUITIES OF STRAINED AND UNSTRAINED LAYER INXGA1-XAS/GAAS AND INXGA1-XAS/INP HETEROJUNCTIONS AND QUANTUM-WELLS
    HRIVNAK, L
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1991, 124 (02): : K111 - K116
  • [43] Direct observation of above-barrier quasibound states in InxGa1-xAs/AlAs/GaAs quantum wells
    Lee, CD
    Son, JS
    Leem, JY
    Noh, SK
    Lee, KS
    Lee, C
    Hwang, IS
    Park, HY
    PHYSICAL REVIEW B, 1996, 54 (03): : 1541 - 1544
  • [44] WIDTH OF EXCITON LINE IN THE LOW-TEMPERATURE PHOTOLUMINESCENCE OF INXGA1-XAS/GAAS STRUCTURES WITH SINGLE QUANTUM-WELLS
    IGNATEV, AS
    KARACHEVTSEVA, MV
    MOKEROV, VG
    NEMTSEV, GZ
    STRAKHOV, VA
    YAREMENKO, NG
    SEMICONDUCTORS, 1994, 28 (01) : 75 - 79
  • [45] Dynamics of Trion Formation in InxGa1-xAs Quantum Wells
    Portella-Oberli, M. T.
    Berney, J.
    Kappei, L.
    Morier-Genoud, F.
    Szczytko, J.
    Deveaud-Pledran, B.
    PHYSICAL REVIEW LETTERS, 2009, 102 (09)
  • [46] Absorption spectrum of an exciton in an InxGa1-xAs/GaAs quantum dot in the presence of a magnetic field
    Rodríguez, JC
    Fonseca, K
    Rey-González, RR
    SURFACE REVIEW AND LETTERS, 2002, 9 (5-6) : 1785 - 1789
  • [47] CALCULATION OF THE EXCITON PARAMETERS IN STRESSED QUANTUM-WELL INXGA1-XAS/GAAS STRUCTURES
    AVRUTSKII, IA
    SYCHUGOV, VA
    USIEVICH, BA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (10): : 1074 - 1077
  • [48] Electron Microscopy of Cracks in InxGa1-xAs/GaAs(001) Multi-Quantum Wells
    Atici, Y.
    Yildiz, K.
    Akgul, U.
    ACTA PHYSICA POLONICA A, 2015, 127 (03) : 859 - 862
  • [49] PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY OF INXGA1-XAS/GAAS STRAINED-LAYER COUPLED DOUBLE QUANTUM-WELLS
    XU, Q
    XU, ZY
    XU, JZ
    ZHENG, BZ
    XIA, H
    SOLID STATE COMMUNICATIONS, 1990, 73 (12) : 813 - 816
  • [50] AN INVESTIGATION OF INXGA1-XAS/GAAS QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY
    JEONG, J
    SHAHID, MA
    LEE, JC
    SCHLESINGER, TE
    MILNES, AG
    JOURNAL OF APPLIED PHYSICS, 1988, 63 (11) : 5464 - 5468
12345