ARGON-ION ASSISTED ETCHING OF SILICON BY MOLECULAR CHLORINE

被引：83

|

作者：

KOLFSCHOTEN, AW ^{[1
]}

HARING, RA ^{[1
]}

HARING, A ^{[1
]}

DEVRIES, AE ^{[1
]}

机构：

[1] FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 10期

关键词：

D O I：

10.1063/1.332890

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3813 / 3818

页数：6

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