ARGON-ION ASSISTED ETCHING OF SILICON BY MOLECULAR CHLORINE

被引：83
|
作者：
KOLFSCHOTEN, AW [1 ]
HARING, RA [1 ]
HARING, A [1 ]
DEVRIES, AE [1 ]
机构：
[1] FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS
来源：
JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 10期
关键词：
D O I：
10.1063/1.332890
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：3813 / 3818
页数：6
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