OPTIMUM GROWTH TEMPERATURE DETERMINATION FOR GALNSB/INAS STRAINED-LAYER SUPERLATTICES

To determine the optimum growth temperature for GaInSb/InAs strained layer superlattices (SLS) a series of SLS was grown over the temperature range 357-433-degrees-C. Temperatures were estimated by determining the absorption spectrum of the GaAs substrate, hence its band gap, and thus its temperature. SLS were evaluated by single crystal x-ray diffraction and interband magnetoabsorption (IMA) measurements. X-ray spectra showed as many as eight peaks due to the superlattice. The quality of the superlattices as indicated by the x-ray data had a well defined maximum between 390 and 410-degrees-C. IMA measurements indicated band gaps from 85 to 154 meV.