OPTICALLY-EXCITED MINORITY-ELECTRON VELOCITY IN SELECTIVELY BE-DOPED ALGAAS/GAAS/ALGAAS SINGLE QUANTUM-WELLS

被引：5
|
作者：
SHIGEKAWA, N
FURUTA, T
MAEZAWA, K
MIZUTANI, T
机构：
[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa 243-01
来源：
APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 12期
关键词：
D O I：
10.1063/1.102545
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The minority-electron velocity versus electric field (v-E) relationship was measured for selectively Be-doped Al0.5Ga0.5As/GaAs/ Al0.5Ga0.5As single quantum wells with different well-layer thicknesses by means of the time-of-flight (TOF) method at room temperature. It was found that the electron drift velocity for the 200-Å-thick quantum well is suppressed in comparison with those for the 600-Å-thick and 2000-Å-thick wells. This suppression is successfully explained by considering that the electron-hole interaction is enhanced in narrower wells due to a larger overlap of the wave functions of electrons and holes.
引用
收藏
页码：1146 / 1148
页数：3
相关论文
共 50 条
  • [1] ACOUSTIC-PHONON EMISSION ANGLE IN SELECTIVELY DOPED ALGAAS-GAAS-ALGAAS SINGLE QUANTUM-WELLS
    XU, W
    MAHANTY, J
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1994, 6 (31) : 6265 - 6278
  • [2] PHOTOLUMINESCENCE STUDY OF DONORS IN SELECTIVELY DOPED GAAS/ALGAAS QUANTUM-WELLS
    LIU, X
    PETROU, A
    MCCOMBE, BD
    RALSTON, J
    WICKS, G
    [J]. INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (95): : 33 - 38
  • [3] PHOTOLUMINESCENCE STUDY OF DONORS IN SELECTIVELY DOPED GAAS/ALGAAS QUANTUM-WELLS
    LIU, X
    PETROU, A
    MCCOMBE, BD
    RALSTON, J
    WICKS, G
    [J]. SHALLOW IMPURITIES IN SEMICONDUCTORS 1988, 1989, 95 : 33 - 38
  • [4] Effect of hydrogen passivation on Be-doped AlGaAs/GaAs quantum wells
    Buyanova, IA
    Ferreira, AC
    Holtz, PO
    Monemar, B
    Campman, K
    Merz, JL
    Gossard, AC
    [J]. APPLIED PHYSICS LETTERS, 1996, 68 (10) : 1365 - 1367
  • [5] ELECTRON-DISTRIBUTION IN MODULATION-DOPED ALGAAS/GAAS SINGLE QUANTUM-WELLS AND INVERTED MODULATION-DOPED GAAS/ALGAAS HETEROSTRUCTURES
    SUZUKI, K
    SAITO, K
    SAKU, T
    SUGIMURA, A
    HORIKOSHI, Y
    YAMADA, S
    [J]. JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 1266 - 1269
  • [6] HOT-ELECTRON SCATTERING MECHANISMS IN ALGAAS/GAAS/ALGAAS QUANTUM-WELLS
    MAKIYAMA, K
    KASAI, K
    OHORI, T
    KOMENO, J
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (3B) : B248 - B250
  • [7] ENHANCEMENT OF FREE-TO-BOUND TRANSITIONS DUE TO RESONANT ELECTRON-CAPTURE IN BE-DOPED ALGAAS/GAAS QUANTUM-WELLS
    MURAKI, K
    TAKAHASHI, Y
    FUJIWARA, A
    FUKATSU, S
    SHIRAKI, Y
    [J]. SOLID-STATE ELECTRONICS, 1994, 37 (4-6) : 1247 - 1250
  • [8] SUBPICOSECOND DYNAMICS OF ELECTRON INJECTION INTO GAAS/ALGAAS QUANTUM-WELLS
    GOODNICK, SM
    LUGLI, P
    [J]. APPLIED PHYSICS LETTERS, 1987, 51 (08) : 584 - 586
  • [9] SPIN RELAXATION IN OPTICALLY-EXCITED QUANTUM-WELLS
    SNELLING, MJ
    PLAUT, AS
    FLINN, GP
    TROPPER, AC
    HARLEY, RT
    KERR, TM
    [J]. JOURNAL OF LUMINESCENCE, 1990, 45 (1-6) : 208 - 210
  • [10] ELECTRON-CYCLOTRON RESONANCE PLASMA-INDUCED DAMAGE IN ALGAAS/GAAS/ALGAAS SINGLE QUANTUM-WELLS
    SWAMINATHAN, V
    ASOM, MT
    CHAKRABARTI, UK
    PEARTON, SJ
    [J]. APPLIED PHYSICS LETTERS, 1991, 58 (12) : 1256 - 1258
12345