SHAPE OF ELECTRON-HOLE DROPLETS IN HIGHLY EXCITED ANISOTROPIC SEMICONDUCTORS - APPLICATION TO UNIAXIALLY STRESSED GE AND SI

被引：3

作者：

MORIMOTO, M ^{[1
]}

SHINDO, K ^{[1
]}

MORITA, A ^{[1
]}

机构：

[1] TOHOKU UNIV, DEPT PHYS, SENDAI 980, JAPAN

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1976年 / 41卷 / 01期

关键词：

D O I：

10.1143/JPSJ.41.91

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：91 / 99

页数：9

共 50 条

[1] CALCULATION OF PROPERTIES OF THE ELECTRON-HOLE LIQUID IN UNIAXIALLY STRESSED GE AND SI
KELSO, SM
[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1979, 24 (03): : 343 - 343
[2] CALCULATION OF PROPERTIES OF THE ELECTRON-HOLE LIQUID IN UNIAXIALLY STRESSED GE AND SI
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[J]. PHYSICAL REVIEW B, 1982, 25 (12): : 7631 - 7651
[3] THEORY OF ELECTRON-HOLE PLASMA IN HIGHLY EXCITED SI AND GE
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[J]. PHYSICAL REVIEW B, 1977, 16 (04): : 1552 - 1563
[4] ELECTRON-HOLE DROPLETS IN STRAINED GE AND SI
LIU, L
[J]. SOLID STATE COMMUNICATIONS, 1978, 25 (10) : 805 - 807
[5] METALLIZED ELECTRON-HOLE DROPLETS IN STRAINED SI AND GE
VASHISHTA, P
BHATTACHARYYA, P
SINGWI, KS
[J]. PHYSICAL REVIEW LETTERS, 1973, 30 (25) : 1248 - 1251
[6] ELECTRON-HOLE DROPS IN UNIAXIALLY STRESSED SILICON
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SAUER, R
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 94 (01): : 69 - 78
[7] ELECTRON-HOLE LIQUID IN SEMICONDUCTORS WITH HIGHLY ANISOTROPIC SPECTRUM
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[J]. DOKLADY AKADEMII NAUK SSSR, 1980, 254 (01): : 84 - 87
[8] DISPERSION OF ELECTRON-HOLE DROPLETS IN GE
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BAGAEV, VS
PADUCHIKH, LID
POYARKOV, AG
[J]. JETP LETTERS, 1976, 24 (04) : 200 - 203
[9] RECOMBINATION LUMINESCENCE FROM HOT CARRIERS IN ELECTRON-HOLE DROPLETS IN STRESSED GE
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WONG, GK
FELDMAN, BJ
[J]. PHYSICAL REVIEW LETTERS, 1977, 39 (15) : 959 - 962
[10] LARGE ANISOTROPIES IN SHAPE OF CLOUD OF ELECTRON-HOLE DROPLETS (EHD) IN GE
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GREENSTEIN, M
ARZEGIAN, J
[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 422 - 422

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