METALLIZED ELECTRON-HOLE DROPLETS IN STRAINED SI AND GE

被引:55
|
作者
VASHISHTA, P
BHATTACHARYYA, P
SINGWI, KS
机构
[1] ARGONNE NATL LAB, ARGONNE, IL 60439 USA
[2] NORTHWESTERN UNIV, PHYS DEPT, EVANSTON, IL 60201 USA
关键词
D O I
10.1103/PhysRevLett.30.1248
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:1248 / 1251
页数:4
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