METALLIZED ELECTRON-HOLE DROPLETS IN STRAINED SI AND GE

被引：55
|
作者：
VASHISHTA, P
BHATTACHARYYA, P
SINGWI, KS
机构：
[1] ARGONNE NATL LAB, ARGONNE, IL 60439 USA
[2] NORTHWESTERN UNIV, PHYS DEPT, EVANSTON, IL 60201 USA
来源：
PHYSICAL REVIEW LETTERS | 1973年 / 30卷 / 25期
关键词：
D O I：
10.1103/PhysRevLett.30.1248
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：1248 / 1251
页数：4
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