X-ray reciprocal space mapping of Si/Si1-xCex heterostructures

被引：39
|
作者：
Bauer, G
Li, JH
Koppensteiner, E
机构：
[1] Institut für Halbleiterphysik, Johannes Kepler Universität Linz
来源：
JOURNAL OF CRYSTAL GROWTH | 1995年 / 157卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(95)00372-X
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The analysis of composition, strain, and strain relaxation in molecular beam epitaxy grown Si/SiGe structures is described, based on the use of reciprocal space mapping techniques employing high resolution triple axis X-ray diffractometry.
引用
收藏
页码：61 / 67
页数：7
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