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- [2] Optically detected magnetic resonance study of an arsenic-antisite-arsenic-vacancy complex in GaAs PHYSICAL REVIEW B, 1998, 58 (12): : 7707 - 7716
- [3] Infrared absorption related to the metastable state of arsenic antisite defects in electron-irradiated GaAs SEMICONDUCTING AND INSULATING MATERIALS, 1996: PROCEEDINGS OF THE 9TH CONFERENCE ON SEMICONDUCTING AND INSULATING MATERIALS (SIMC'96), 1996, : 267 - 270
- [5] Arsenic antisite - Arsenic vacancy complex and gallium vacancy in GaAs: A kind of bistability pair of intrinsic defects? ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 1061 - 1065
- [9] IDENTIFICATION OF THE ISOLATED ARSENIC ANTISITE DEFECT IN ELECTRON-IRRADIATED GALLIUM-ARSENIDE AND ITS RELATION TO THE EL2 DEFECT PHYSICAL REVIEW B, 1992, 45 (03): : 1481 - 1484
- [10] DEFECT IDENTIFICATION IN ELECTRON-IRRADIATED GAAS PHYSICAL REVIEW B, 1982, 26 (12) : 7090 - 7092