DEFECT IDENTIFICATION IN ELECTRON-IRRADIATED GAAS

被引：29
|
作者：
LOUALICHE, S [1 ]
GUILLOT, G [1 ]
NOUAILHAT, A [1 ]
BOURGOIN, J [1 ]
机构：
[1] ECOLE NORMALE SUPER, PHYS SOLIDES GRP, F-75221 PARIS 05, FRANCE
来源：
PHYSICAL REVIEW B | 1982年 / 26卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.26.7090
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：7090 / 7092
页数：3
相关论文
共 50 条
  • [1] IDENTIFICATION OF THE ARSENIC VACANCY DEFECT IN ELECTRON-IRRADIATED GAAS
    VONBARDELEBEN, HJ
    BOURGOIN, JC
    [J]. PHYSICAL REVIEW B, 1986, 33 (04): : 2890 - 2892
  • [2] DEFECT MODELS IN ELECTRON-IRRADIATED N-TYPE GAAS
    ZIEBRO, B
    HEMSKY, JW
    LOOK, DC
    [J]. JOURNAL OF APPLIED PHYSICS, 1992, 72 (01) : 78 - 81
  • [3] Defect models in electron-irradiated n-type GaAs
    [J]. 1600, (72):
  • [4] DEFECT PRODUCTION IN ELECTRON-IRRADIATED, N-TYPE GAAS
    LOOK, DC
    SIZELOVE, JR
    [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) : 3660 - 3664
  • [5] ANNEALING OF ELECTRON-IRRADIATED GAAS
    AUKERMAN, LW
    GRAFT, RD
    [J]. PHYSICAL REVIEW, 1962, 127 (05): : 1576 - &
  • [6] DEFECT STUDY ON ELECTRON-IRRADIATED GAAS BY MEANS OF POSITRON-ANNIHILATION
    ITOH, Y
    MURAKAMI, H
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1994, 58 (01): : 59 - 62
  • [7] OBSERVATION OF GA ANTISITE DEFECT IN ELECTRON-IRRADIATED SEMIINSULATING GAAS BY PHOTOLUMINESCENCE
    KURIYAMA, K
    YOKOYAMA, K
    TOMIZAWA, K
    TAKEUCHI, T
    TAKAHASHI, H
    [J]. APPLIED PHYSICS LETTERS, 1992, 61 (07) : 843 - 845
  • [8] DAMAGE PRODUCTION IN ELECTRON-IRRADIATED GAAS
    FARMER, JW
    LOOK, DC
    [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 289 - 289
  • [9] ELECTRICAL PROPERTIES OF ELECTRON-IRRADIATED GAAS
    KALMA, AH
    BERGER, RA
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1972, NS19 (06) : 209 - 214
  • [10] TYPE CONVERSION IN ELECTRON-IRRADIATED GAAS
    FARMER, JW
    LOOK, DC
    [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (04) : 2970 - 2972
12345