A MODEL FOR THE SILICON-WAFER BONDING PROCESS

被引：225
|
作者：
STENGL, R
TAN, T
GOSELE, U
机构：
[1] DUKE UNIV,SCH ENGN,DURHAM,NC 27706
[2] MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1989年 / 28卷 / 10期
关键词：
D O I：
10.1143/JJAP.28.1735
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1735 / 1741
页数：7
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