MICROCAVITIES WITH FIELD EMITTERS SEALED BY SILICON-WAFER BONDING

被引：0
|
作者：
STENGL, R
MEUL, HW
HONLEIN, W
机构：
[1] Siemens AG, Research Laboratories, Mümchen
来源：
ELECTRONICS LETTERS | 1991年 / 27卷 / 24期
关键词：
EPITAXY AND EPITAXIAL GROWTH; SILICON WAFER BONDING; DIODES; INTEGRATED CIRCUITS;
D O I：
10.1049/el:19911366
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A method of fabricating micrometre-sized field emission diodes is described. The devices use silicon field emitters that have been grown by selective epitaxy into 0.9-mu-m sized contact holes in a 1-mu-m thick field oxide. The anode of the device structure is a silicon wafer directly bonded to the field oxide.
引用
收藏
页码：2209 / 2210
页数：2
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