EFFECT OF HCL ON THE ELECTRICAL-PROPERTIES OF SIO2-FILMS

被引：2
|
作者：
MAND, RS [1 ]
TAYLOR, DM [1 ]
机构：
[1] UNIV COLL N WALES,SCH ELECTR ENGN SCI,BANGOR LL57 1UT,GWYNEDD,WALES
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1984年 / 17卷 / 04期
关键词：
D O I：
10.1088/0022-3727/17/4/023
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：839 / 845
页数：7
相关论文
共 50 条
  • [1] ELECTRICAL-PROPERTIES OF RF-SPUTTERED SIO2-FILMS
    SANTAMARIA, J
    QUESADA, FS
    DIAZ, GG
    IBORRA, E
    VIDAL, MR
    [J]. THIN SOLID FILMS, 1985, 125 (3-4) : 299 - 303
  • [2] ELECTRICAL-PROPERTIES OF SI IMPLANTED WITH AS THROUGH SIO2-FILMS
    HIRAO, T
    FUSE, G
    INOUE, K
    TAKAYANAGI, S
    YAEGASHI, Y
    ICHIKAWA, S
    IZUMI, T
    [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 262 - 268
  • [3] ELECTRICAL-PROPERTIES OF POST-ANNEALED THIN SIO2-FILMS
    COHEN, SS
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (11) : 2728 - 2729
  • [4] ELECTRICAL-PROPERTIES OF 200-500 LPCVD SIO2-FILMS
    VOGEL, RH
    BUTLER, SR
    FEIGL, FJ
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) : C328 - C328
  • [5] ELECTRICAL-PROPERTIES OF POST-ANNEALED THIN SIO2-FILMS
    COHEN, SS
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (04) : 929 - 932
  • [6] NEW OBSERVATIONS ON THE ELECTRICAL-PROPERTIES AND INSTABILITIES OF PURE AND METAL DOPED SIO2-FILMS
    KRISHNA, KV
    DELIMA, JJ
    EZE, FC
    OWEN, AE
    [J]. PHYSICA B & C, 1985, 129 (1-3): : 245 - 248
  • [7] ELECTRICAL-PROPERTIES OF SIO2-FILMS IN DOUBLE LEVEL POLY-SI STRUCTURES
    KOYANAGI, M
    KAMIYAMA, T
    SUNAMI, H
    HASHIMOTO, N
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : C117 - C117
  • [8] EFFECT OF POWER ON INTERFACE AND ELECTRICAL-PROPERTIES OF SIO2-FILMS PRODUCED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION
    LANDHEER, D
    XU, DX
    TAO, Y
    SPROULE, GI
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 77 (04) : 1600 - 1606
  • [9] ELECTRICAL-PROPERTIES OF THIN SIO2-FILMS NITRIDED IN N2O BY RAPID THERMAL-PROCESSING
    SEVERI, M
    MATTEI, G
    DORI, L
    MACCAGNANI, P
    BALDINI, GL
    PIZZOCHERO, G
    [J]. MICROELECTRONIC ENGINEERING, 1992, 19 (1-4) : 657 - 660
  • [10] MECHANISM OF ELECTRICAL BREAKDOWN IN SIO2-FILMS
    RIDLEY, BK
    [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) : 998 - 1007
12345