CHARACTERISTICS OF HEAVILY SN-DOPED LOW-PRESSURE OMVPE GROWN INP

被引：0
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作者：
CLAWSON, AR
HANSON, CM
机构：
[1] USN,CTR OCEAN SYST,SAN DIEGO,CA 92152
[2] UNIV CALIF SAN DIEGO,DEPT ECE,LA JOLLA,CA 92093
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1990年 / 19卷 / 07期
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：32 / 32
页数：1
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