STRAIN RELATED SHALLOW LEVELS IN (100)-ORIENTED AND (311)-ORIENTED INGAAS/GAAS QUANTUM-WELL STRUCTURES

被引：0
|
作者：
GUIMARAES, FEG
LUBYSHEV, D
DASILVA, SW
CHITTA, VA
GALZERANI, JC
BASMAJI, P
机构：
[1] USP,INST FIS & QUIM SAO CARLOS,BR-13560970 SAO CARLOS,SP,BRAZIL
[2] UNIV FED SAO CARLOS,BR-13565905 SAO CARLOS,SP,BRAZIL
来源：
SOLID STATE COMMUNICATIONS | 1995年 / 93卷 / 05期
关键词：
D O I：
10.1016/0038-1098(95)80047-6
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：466 / 466
页数：1
相关论文
共 50 条
  • [31] INGAAS QUANTUM-WELL WIRES GROWN ON PATTERNED GAAS SUBSTRATES
    MIRIN, RP
    TAN, IH
    WEMAN, H
    LEONARD, M
    YASUDA, T
    BOWERS, JE
    HU, EL
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04): : 697 - 700
  • [32] INTERDIFFUSION PROCESS IN INGAAS/INP QUANTUM-WELL STRUCTURES
    MUKAI, K
    SUGAWARA, M
    YAMAZAKI, S
    JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) : 433 - 438
  • [33] Optical and electrical characteristics of GaAs/InGaAs quantum-well device
    Hsu, K. C.
    Ho, C. H.
    Lin, Y. S.
    Wu, Y. H.
    Hsu, R. T.
    Huang, K. W.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2009, 471 (1-2) : 567 - 569
  • [34] FACET OXIDATION OF INGAAS/GAAS STRAINED QUANTUM-WELL LASERS
    OKAYASU, M
    FUKUDA, M
    TAKESHITA, T
    UEHARA, S
    KURUMADA, K
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (12) : 8346 - 8351
  • [35] SPONTANEOUS RECOMBINATION CURRENT IN INGAAS GAAS QUANTUM-WELL LASERS
    BLOOD, P
    FLETCHER, ED
    WOODBRIDGE, K
    VENING, M
    APPLIED PHYSICS LETTERS, 1990, 57 (15) : 1482 - 1484
  • [36] Intermixing in strained InGaAs/GaAs quantum-well infrared photodetectors
    Lee, ASW
    Li, EH
    Karunasiri, G
    APPLIED PHYSICS LETTERS, 1999, 74 (08) : 1102 - 1104
  • [37] PHOTOELECTRIC PROPERTIES OF EPITAXIAL GAAS/INGAAS QUANTUM-WELL HETEROSTRUCTURES
    KARPOVICH, IA
    ALESHKIN, VY
    ANSHON, AV
    BABUSHKINA, TS
    ZVONKOV, BN
    MALKINA, IG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (12): : 1346 - 1348
  • [38] Study of strained InGaAs/GaAs quantum-well laser by MOCVD
    Liu, An-Ping
    Duan, Li-Hua
    Zhou, Yong
    Guangdianzi Jiguang/Journal of Optoelectronics Laser, 2010, 21 (02): : 163 - 165
  • [39] ELECTROABSORPTION ENHANCEMENT IN DISORDERED, STRAINED INGAAS/GAAS QUANTUM-WELL
    MICALLEF, J
    LI, EH
    WEISS, BL
    APPLIED PHYSICS LETTERS, 1995, 67 (19) : 2768 - 2770
  • [40] Picosecond photoluminescence dynamics in an InGaAs/GaAs quantum-well heterostructure
    V. Ya. Aleshkin
    A. A. Dubinov
    L. V. Gavrilenko
    Z. F. Krasilnik
    K. I. Kuritsyn
    D. I. Kryzhkov
    S. V. Morozov
    Semiconductors, 2012, 46 : 917 - 920
12345