ALGAAS/GAAS STRIPE LASER-DIODES FABRICATED ON SI SUBSTRATES BY MOCVD

被引：19
|
作者：
SAKAI, S [1 ]
SHIRAISHI, H [1 ]
UMENO, M [1 ]
机构：
[1] NAGOYA INST TECHNOL, DEPT ELECT & COMP ENGN, SHOWA KU, NAGOYA, AICHI 466, JAPAN
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1987年 / 23卷 / 06期
关键词：
D O I：
10.1109/JQE.1987.1073468
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1080 / 1084
页数：5
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