SELF-INTERACTION OF SURFACE-POLARITONS AT THE NARROW-GAP N-TYPE SEMICONDUCTOR METAL INTERFACE

被引：5

作者：

AZARENKOV, NA

OSTRIKOV, KN

OSMAYEV, OA

机构：

[1] Kharkov State University, Kharkov

来源：

SOLID STATE COMMUNICATIONS | 1993年 / 85卷 / 12期

关键词：

D O I：

10.1016/0038-1098(93)90168-M

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The nonlinear self-interaction of the potential surface polaritons (SP) which is due to the free carriers dispersion law where nonparabolicity is studied. The SP propagate at the interface between n-type semiconductor and a metal. The self interaction of the SP is shown to be different in semiconductors with normal and inverse zone structures. The results of the SP field envelope evolution are given. The obtained nonlinear frequency shift has been compared with shifts which are due to another self-interaction mechanisms. This comparison shows that the nonlinear self-interaction mechanism, which is due to free carriers spectrum nonparabolicity, is especially significant in narrow-gap semiconductor materials.

引用

页码：1065 / 1069

页数：5

共 43 条

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