SURFACE CLEANING OF GASB (100) SUBSTRATES FOR MOLECULAR-BEAM EPITAXY

被引：4
|
作者：
KODAMA, M
RYOJI, A
KIMATA, M
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1984年 / 23卷 / 12期
关键词：
D O I：
10.1143/JJAP.23.1657
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1657 / 1658
页数：2
相关论文
共 50 条
  • [31] Studying the Formation of Si (100) Stepped Surface in Molecular-Beam Epitaxy
    M. Yu. Esin
    Yu. Yu. Hervieu
    V. A. Timofeev
    A. I. Nikiforov
    [J]. Russian Physics Journal, 2018, 61 : 1210 - 1214
  • [32] HIGH-RESISTIVITY GASB GROWN BY MOLECULAR-BEAM EPITAXY
    POLYAKOV, AY
    STAM, M
    MILNES, AG
    WILSON, RG
    FANG, ZQ
    RAICHOUDHURY, P
    HILLARD, RJ
    [J]. JOURNAL OF APPLIED PHYSICS, 1992, 72 (04) : 1315 - 1319
  • [33] MOMBE (METALORGANIC MOLECULAR-BEAM EPITAXY) GROWTH OF INGASB ON GASB
    KANEKO, T
    ASAHI, H
    OKUNO, Y
    GONDA, S
    [J]. JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 158 - 162
  • [34] SURFACE CHARACTERIZATION IN MOLECULAR-BEAM EPITAXY
    TRACY, JC
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (08) : C243 - &
  • [35] MOLECULAR-BEAM EPITAXY OF GASB AND GASBXAS1-X
    YANO, M
    SUZUKI, Y
    ISHII, T
    MATSUSHIMA, Y
    KIMATA, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (12) : 2091 - 2096
  • [36] MOLECULAR-BEAM EPITAXY OF ALSB ON GAAS AND GASB ON ALSB FILMS
    GOTOH, H
    SASAMOTO, K
    KURODA, S
    KIMATA, M
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 75 (02): : 641 - 645
  • [37] SELECTIVE AREA EPITAXY OF GASB BY METAL-ORGANIC MOLECULAR-BEAM EPITAXY
    LIU, XF
    ASAHI, H
    OKUNO, Y
    INOUE, K
    GONDA, S
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (5B): : L703 - L706
  • [38] SELECTIVE-AREA EPITAXY OF GASB AND ALGASB BY METALORGANIC MOLECULAR-BEAM EPITAXY
    LIU, XF
    ASAHI, H
    OKUNO, Y
    MARX, D
    INOUE, K
    GONDA, S
    [J]. JOURNAL OF CRYSTAL GROWTH, 1994, 136 (1-4) : 250 - 255
  • [39] PREPARATION OF GASB BY MOLECULAR-BEAM EPITAXY AND ELECTRICAL AND PHOTOLUMINESCENCE CHARACTERIZATION
    BARALDI, A
    GHEZZI, C
    MAGNANINI, R
    PARISINI, A
    TARRICONE, L
    BOSACCHI, A
    FRANCHI, S
    AVANZINI, V
    ALLEGRI, P
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 28 (1-3): : 174 - 178
  • [40] MOLECULAR-BEAM EPITAXY GROWTH AND CHARACTERIZATION OF THIN (LESS-THAN-2-MU-M) GASB LAYERS ON GAAS(100) SUBSTRATES
    IVANOV, SV
    ALTUKHOV, PD
    ARGUNOVA, TS
    BAKUN, AA
    BUDZA, AA
    CHALDYSHEV, VV
    KOVALENKO, YA
    KOPEV, PS
    KUTT, RN
    MELTSER, BY
    RUVIMOV, SS
    SHAPOSHNIKOV, SV
    SOROKIN, LM
    USTINOV, VM
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (03) : 347 - 356
12345