ISOTOPE EFFECTS ON BORON PHOSPHIDE SINGLE-CRYSTAL WAFERS

被引：18

作者：

KUMASHIRO, Y ^{[1
]}

OKADA, Y ^{[1
]}

OKUMURA, H ^{[1
]}

机构：

[1] ELECTROTECH LAB,TSUKUBA 305,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 132卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(93)90090-J

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Boron phosphide single crystal wafers enriched with B-10 with an area of 20 X 20 mm2 and a thickness of 200-300 mum were prepared by chemical vapor deposition using the (B2H6)-B-10-PH3 system. The isotope ratio B-10/B-11 of the wafer is to be 19, determined by mass spectrometric profiles. Measurements of precise lattice parameters by the Bond method and of electrical properties by the Van der Pauw method were performed. The lattice constants of boron phosphide enriched with B-10 are larger than those of normal boron phosphide, which is qualitatively consistent with the Raman spectra.

引用

页码：611 / 613

页数：3

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