INVESTIGATION OF THE DX CENTER IN HEAVILY DOPED N-TYPE GAAS

被引：120
|
作者：
MAUDE, DK
PORTAL, JC
DMOWSKI, L
FOSTER, T
EAVES, L
NATHAN, M
HEIBLUM, M
HARRIS, JJ
BEALL, RB
机构：
[1] INST NATL SCI APPL LYON,DEPT GENIE PHYS,F-31077 TOULOUSE,FRANCE
[2] CNRS,SERV NATL CHAMPS INTENSES,F-38042 GRENOBLE,FRANCE
[3] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
[4] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
来源：
PHYSICAL REVIEW LETTERS | 1987年 / 59卷 / 07期
关键词：
D O I：
10.1103/PhysRevLett.59.815
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：815 / 818
页数：4
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