SIMULATED ROTATIONAL INSTABILITIES IN MOLTEN BISMUTH SILICON-OXIDE

被引:86
|
作者
WHIFFIN, PAC [1 ]
BRUTON, TM [1 ]
BRICE, JC [1 ]
机构
[1] MULLARD RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
关键词
D O I
10.1016/0022-0248(76)90033-6
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:205 / 210
页数:6
相关论文
共 50 条
  • [41] STOICHIOMETRY OF THIN SILICON-OXIDE LAYERS ON SILICON
    SIGMON, TW
    CHU, WK
    LUGUJJO, E
    MAYER, JW
    APPLIED PHYSICS LETTERS, 1974, 24 (03) : 105 - 107
  • [42] WORK FUNCTION TOPOGRAPHY OF SILICON AND SILICON-OXIDE
    CHARTIER, JL
    PILORGET, L
    LEBIHAN, R
    REVUE DE PHYSIQUE APPLIQUEE, 1984, 19 (11): : 927 - 931
  • [43] HOLOGRAPHIC-RECORDING IMPROVEMENT IN A BISMUTH SILICON-OXIDE CRYSTAL BY THE MOVING-GRATING TECHNIQUE
    WANG, ZQ
    GILLESPIE, WA
    CARTWRIGHT, CM
    APPLIED OPTICS, 1994, 33 (32): : 7627 - 7633
  • [44] THERMALLY STIMULATED CURRENT STUDIES OF BISMUTH SILICON-OXIDE CRYSTAL .2. TRAPPING KINETICS
    TAKAMORI, T
    JUST, D
    JOURNAL OF APPLIED PHYSICS, 1990, 68 (11) : 5700 - 5703
  • [45] IMPURITY INDUCED PHOTOCHROMIC BEHAVIOR IN BISMUTH SILICON-OXIDE (BI12SIO20)
    TANGUAY, AR
    MROCZKOWSKI, S
    BARKER, RC
    JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1978, 68 (10) : 1396 - 1396
  • [46] MECHANISM OF CARRIER TRANSPORT THROUGH A SILICON-OXIDE LAYER FOR [INDIUM-TIN-OXIDE/SILICON-OXIDE/SILICON] SOLAR-CELLS
    KOBAYASHI, H
    ISHIDA, T
    NAKATO, Y
    MORI, H
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (06) : 3931 - 3939
  • [47] HEAT-TREATMENT AND STEAMING EFFECTS OF SILICON-OXIDE UPON ELECTRON DISSIPATION ON SILICON-OXIDE SURFACE
    UCHIHASHI, T
    OKUSAKO, T
    SUGAWARA, Y
    YAMANISHI, Y
    OASA, T
    MORITA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (8A): : L1128 - L1130
  • [48] PHOTOELECTRET AND X-RAYS-ELECTRET STATE IN BISMUTH SILICON-OXIDE SINGLE-CRYSTALS
    VAVREK, AF
    DOKLADI NA BOLGARSKATA AKADEMIYA NA NAUKITE, 1982, 35 (09): : 1213 - 1216
  • [49] CZOCHRALSKI GROWTH OF OPTICAL QUALITY BISMUTH SILICON-OXIDE (BI12SIO20)
    TANGUAY, AR
    MROCZKOWSKI, S
    BARKER, RC
    JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) : 431 - 434
  • [50] REAL-TIME INTENSITY INVERSION BY 4-WAVE-MIXING IN BISMUTH SILICON-OXIDE
    WOODER, NJ
    DAINTY, JC
    OPTICS COMMUNICATIONS, 1987, 63 (02) : 85 - 88