HIGH-SPEED PHOTOCONDUCTIVITY OF GAP LIGHT-EMITTING-DIODES AT LIQUID-NITROGEN TEMPERATURE

被引：1
|
作者：
MOSER, K
EISFELD, W
PRETTL, W
机构：
[1] Univ Regensburg, Inst fuer, Angewandte Physik, Regensburg, West, Ger, Univ Regensburg, Inst fuer Angewandte Physik, Regensburg, West Ger
来源：
INFRARED PHYSICS | 1985年 / 25卷 / 04期
关键词：
LASERS; CARBON DIOXIDE - Modes - SEMICONDUCTOR MATERIALS - Photoconductivity;
D O I：
10.1016/0020-0891(85)90023-5
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
In GaP:N (Zn,Te) light-emitting diodes, extrinsic photoconductivity was excited by mode-locked TEA CO//2 laser pulses at liquid-nitrogen temperature, showing a current sensitivity of 2 multiplied by (times) 10** minus **5 A/W and a response time of the order of 0. 5 ns.
引用
收藏
页码：659 / 660
页数：2
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