MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF A NOVEL SUPERLATTICE SYSTEM - HG1-XCDXTE-CDTE

被引:14
|
作者
RENO, J
SOU, IK
WIJEWARNASURIYA, PS
FAURIE, JP
机构
关键词
D O I
10.1063/1.96599
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1069 / 1071
页数:3
相关论文
共 50 条
  • [31] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF (100) HGSE ON GAAS
    BECKER, CR
    HE, L
    EINFELDT, S
    WU, YS
    LERONDEL, G
    HEINKE, H
    OEHLING, S
    BICKNELLTASSIUS, RN
    LANDWEHR, G
    [J]. JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) : 331 - 334
  • [32] MOLECULAR-BEAM EPITAXIAL-GROWTH OF A NOVEL STRAINED LAYER TYPE-III SUPERLATTICE SYSTEM - HGTE-ZNTE
    FAURIE, JP
    SIVANANTHAN, S
    CHU, X
    WIJEWARNASURIYA, PA
    [J]. APPLIED PHYSICS LETTERS, 1986, 48 (12) : 785 - 787
  • [33] MOLECULAR-BEAM EPITAXIAL-GROWTH OF CDTE ON 5-IN-DIAM SI(100)
    SPORKEN, R
    LANGE, MD
    MASSET, C
    FAURIE, JP
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (14) : 1449 - 1451
  • [34] MOLECULAR-BEAM EPITAXIAL-GROWTH OF ZNSSE WITH HG-XE LAMP IRRADIATION
    MATSUMURA, N
    TSUBOKURA, M
    MIYAGAWA, K
    NAKAMURA, N
    MIYANAGI, Y
    FUKADA, T
    SARAIE, J
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (05): : L723 - L726
  • [35] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF EPITAXIAL GASE FILMS ON (001)GAAS
    KOJIMA, N
    SATO, K
    BUDIMAN, M
    YAMADA, A
    KONAGAI, M
    TAKAHASHI, K
    NAKAMURA, Y
    NITTONO, O
    [J]. JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 1175 - 1179
  • [36] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS (331)
    UPPAL, PN
    AHEARN, JS
    MUSSER, DP
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03): : 759 - 760
  • [37] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS(331)
    UPPAL, PN
    AHEARN, JS
    MUSSER, DP
    [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) : 3766 - 3771
  • [38] SELECTIVE EPITAXIAL-GROWTH BY MOLECULAR-BEAM EPITAXY
    OKAMOTO, A
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (06) : 1011 - 1015
  • [39] MOLECULAR-BEAM EPITAXIAL-GROWTH OF ZNTE AND ZNSE
    KITAGAWA, F
    MISHIMA, T
    TAKAHASHI, K
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (04) : 937 - 943
  • [40] MOLECULAR-BEAM EPITAXIAL-GROWTH OF SILICON DEVICES
    ALLEN, FG
    IYER, SS
    METZGER, RA
    [J]. PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1982, 323 : 2 - 12