STUDY OF DEFECTS IN WIDE-BAND GAP SEMICONDUCTORS BY ELECTRON-PARAMAGNETIC-RESONANCE

Defects in diamond, baron nitride and gallium nitride, grown by various deposition methods, were investigated by EPR measurements. In diamond films the observed EPR signal has a g value of 2.0028, peak-to-peak linewidth of 3-5 Gauss and spin-lattice relaxation time, at 293 K, of 10(-6) S. In boron nitride films, depending on growth conditions, the g value varies from 2.0024 to 2.0032, the peak-to-peak linewidth varies from 31 to 7 Gauss and the spin-lattice relaxation time at 293 K varies from 10(-5) to 10(-6) s. An EPR signal has not been observed in GaN films at temperatures above 100 K.